完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | Pan, FM | en_US |
dc.contributor.author | Liu, YB | en_US |
dc.contributor.author | Chang, Y | en_US |
dc.contributor.author | Chen, CY | en_US |
dc.contributor.author | Tsai, TG | en_US |
dc.contributor.author | Chang, MN | en_US |
dc.contributor.author | Sheu, JT | en_US |
dc.date.accessioned | 2014-12-08T15:39:50Z | - |
dc.date.available | 2014-12-08T15:39:50Z | - |
dc.date.issued | 2004-01-01 | en_US |
dc.identifier.issn | 1071-1023 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/27226 | - |
dc.description.abstract | We have selectively grown carbon nanotubes on the probe tip of an atomic force microscope by microwave plasma chemical vapor deposition. The catalyst domain was defined on the tip apex of an Si based scanning probe by local electric field induced oxidation of a TiN cap layer, under which the cobalt catalyst layer was predeposited on the probe surface. High resolution atomic force microscopy images of an SiO2 trench pattern are demonstrated using the carbon nanotube tip. The nanotube tip fabrication method is simple and compatible with existing thin film process technology. (C) 2004 American Vacuum Society. | en_US |
dc.language.iso | en_US | en_US |
dc.title | Selective growth of carbon nanotube on scanning probe tips by microwave plasma chemical vapor deposition | en_US |
dc.type | Article | en_US |
dc.identifier.journal | JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | en_US |
dc.citation.volume | 22 | en_US |
dc.citation.issue | 1 | en_US |
dc.citation.spage | 90 | en_US |
dc.citation.epage | 93 | en_US |
dc.contributor.department | 材料科學與工程學系 | zh_TW |
dc.contributor.department | Department of Materials Science and Engineering | en_US |
dc.identifier.wosnumber | WOS:000220573800020 | - |
dc.citation.woscount | 3 | - |
顯示於類別: | 期刊論文 |