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dc.contributor.authorLOONG, WAen_US
dc.contributor.authorSHY, SLen_US
dc.contributor.authorGUO, GCen_US
dc.contributor.authorYANG, MTen_US
dc.contributor.authorSU, SYen_US
dc.date.accessioned2014-12-08T15:04:14Z-
dc.date.available2014-12-08T15:04:14Z-
dc.date.issued1994-01-01en_US
dc.identifier.issn0167-9317en_US
dc.identifier.urihttp://hdl.handle.net/11536/2724-
dc.description.abstractThis paper presents a cross shaped pattern on a chrome mask for the fabrication of 0.5 mu m contact hole. Based on simulation, in comparison to the conventional 0.5 mu m square mask, the contrast of aerial image of this mask gained 1.41 % at no defocus; 8.81 % at defocus 1.5 mu m. Exposure latitude gained 22.8 % under no defocus. From the experimental pattern transfer studies on positive tone photoresist using i-line 5X stepper, this mask has an useful focus range of -1.2 similar to +1.2 mu m while conventional has a range of -0.6 similar to +0.9 mu m. The drawback is that exposure dose needed is 1.2 similar to 1.5 times higher than conventional mask in our study.en_US
dc.language.isoen_USen_US
dc.titleCROSS SHAPED PATTERN ON CHROME MASK FOR 0.5 MU-M CONTACT HOLE FABRICATIONen_US
dc.typeArticle; Proceedings Paperen_US
dc.identifier.journalMICROELECTRONIC ENGINEERINGen_US
dc.citation.volume23en_US
dc.citation.issue1-4en_US
dc.citation.spage175en_US
dc.citation.epage178en_US
dc.contributor.department交大名義發表zh_TW
dc.contributor.department應用化學系zh_TW
dc.contributor.departmentNational Chiao Tung Universityen_US
dc.contributor.departmentDepartment of Applied Chemistryen_US
dc.identifier.wosnumberWOS:A1994MU49900033-
Appears in Collections:Conferences Paper