標題: A method for fabricating a superior oxide/nitride/oxide gate stack
作者: Chang, TC
Yan, ST
Liu, PT
Wang, MC
Sze, SM
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
公開日期: 2004
摘要: A superior oxide/nitride/oxide (ONO) gate stack was demonstrated. High density plasma chemical vapor deposition was used to deposit the silicon nitride layer instead of the conventional low-pressure chemical vapor deposition for silicon/oxide/nitride/oxide/silicon technology. The densified nitride layer was performed by high-temperature dry oxidation to form a thermally grown blocking oxide layer on the silicon nitride rather than a deposited oxide layer. The ONO gate stack shows large memory window, high breakdown voltage, and reliable endurance characteristics, which is a potential candidate for future nonvolatile memory technology. (C) 2004 The Electrochemical Society.
URI: http://hdl.handle.net/11536/27263
http://dx.doi.org/10.1149/1.1738473
ISSN: 1099-0062
DOI: 10.1149/1.1738473
期刊: ELECTROCHEMICAL AND SOLID STATE LETTERS
Volume: 7
Issue: 7
起始頁: G138
結束頁: G140
顯示於類別:期刊論文