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dc.contributor.authorKu, Ching-Shunen_US
dc.contributor.authorHuang, Jheng-Mingen_US
dc.contributor.authorLin, Chih-Mingen_US
dc.contributor.authorLee, Hsin-Yien_US
dc.date.accessioned2014-12-08T15:39:55Z-
dc.date.available2014-12-08T15:39:55Z-
dc.date.issued2009-12-31en_US
dc.identifier.issn0040-6090en_US
dc.identifier.urihttp://dx.doi.org/10.1016/j.tsf.2009.09.018en_US
dc.identifier.urihttp://hdl.handle.net/11536/27264-
dc.description.abstractWe formed epitaxial ZnO thin films on a (0001) c-plane sapphire substrate through deposition of atomic layers (ALD) at 25-160 degrees C using diethylzinc (DEZn) and deionized water as precursors in combination with interrupted flow. High-resolution X-ray diffraction measurements were employed to characterize the microstructure of these films. With interrupted flow, we obtained ZnO thin films with an optimal growth window in a range of 40-160 degrees C, effectively decreasing the growth temperature by about 120 degrees C relative to a conventional method involving continuous flow. X-ray reflectivity measurements showed that the rate of growth increased also between 20 degrees C and 120 degrees C. The XRD results indicate that the stock time might extend the reaction of DEZn and water through an increased duration. All results show that a low temperature for growth improves the crystalline quality and is consistent with thermodynamically blocked self-compensation. (C) 2009 Elsevier B.V. All rights reserved.en_US
dc.language.isoen_USen_US
dc.subjectZnOen_US
dc.subjectAtomic layer depositionen_US
dc.subjectFlow-rate interruptionen_US
dc.subjectX-ray diffractionen_US
dc.titleFabrication of epitaxial ZnO films by atomic-layer deposition with interrupted flowen_US
dc.typeArticle; Proceedings Paperen_US
dc.identifier.doi10.1016/j.tsf.2009.09.018en_US
dc.identifier.journalTHIN SOLID FILMSen_US
dc.citation.volume518en_US
dc.citation.issue5en_US
dc.citation.spage1373en_US
dc.citation.epage1376en_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.identifier.wosnumberWOS:000272861500004-
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