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dc.contributor.authorChang, SCen_US
dc.contributor.authorShieh, JMen_US
dc.contributor.authorFang, JYen_US
dc.contributor.authorWang, YLen_US
dc.contributor.authorDai, BTen_US
dc.contributor.authorFeng, MSen_US
dc.date.accessioned2014-12-08T15:39:57Z-
dc.date.available2014-12-08T15:39:57Z-
dc.date.issued2004-01-01en_US
dc.identifier.issn1071-1023en_US
dc.identifier.urihttp://hdl.handle.net/11536/27297-
dc.description.abstractWe investigated the effect of film stress; hardness, and grain size of copper films on copper electropolishing, which was considered as a next-generation technique in copper multilevel interconnects. The copper electropolishing rate was found to increase with an increase in the tensile stress of copper films. It was suggested that the tensile stress weakened metallic bonds between copper atoms and assisted the copper electropolishing rate, whereas the hardness and grain size of polished copper films did not relate directly to the copper electropolishing rate due to a negligible etching effect and no mechanical stress applied during copper electropolishing in a concentrated phosphoric acid electrolyte. (C) 2004 American Vacuum Society.en_US
dc.language.isoen_USen_US
dc.titleRoles of copper mechanical characteristics in electropolishingen_US
dc.typeArticleen_US
dc.identifier.journalJOURNAL OF VACUUM SCIENCE & TECHNOLOGY Ben_US
dc.citation.volume22en_US
dc.citation.issue1en_US
dc.citation.spage116en_US
dc.citation.epage119en_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.identifier.wosnumberWOS:000220573800025-
dc.citation.woscount10-
Appears in Collections:Articles


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