完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | Mal'shukov, AG | en_US |
dc.contributor.author | Tang, CS | en_US |
dc.contributor.author | Chu, CS | en_US |
dc.contributor.author | Chao, KA | en_US |
dc.date.accessioned | 2019-04-03T06:38:38Z | - |
dc.date.available | 2019-04-03T06:38:38Z | - |
dc.date.issued | 2003-12-01 | en_US |
dc.identifier.issn | 2469-9950 | en_US |
dc.identifier.uri | http://dx.doi.org/10.1103/PhysRevB.68.233307 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/27338 | - |
dc.description.abstract | We predict that in a narrow gap III-V semiconductor quantum well or quantum wire, an observable electron spin current can be generated with a time-dependent gate to modify the Rashba spin-orbit coupling constant. Methods to rectify the so generated ac current are discussed. An all-electric method of spin-current detection is suggested, which measures the voltage on the gate in the vicinity of a two-dimensional electron gas carrying a time-dependent spin current. Both the generation and detection do not involve any optical or magnetic mediator. | en_US |
dc.language.iso | en_US | en_US |
dc.title | Spin-current generation and detection in the presence of an ac gate | en_US |
dc.type | Article | en_US |
dc.identifier.doi | 10.1103/PhysRevB.68.233307 | en_US |
dc.identifier.journal | PHYSICAL REVIEW B | en_US |
dc.citation.volume | 68 | en_US |
dc.citation.issue | 23 | en_US |
dc.citation.spage | 0 | en_US |
dc.citation.epage | 0 | en_US |
dc.contributor.department | 電子物理學系 | zh_TW |
dc.contributor.department | Department of Electrophysics | en_US |
dc.identifier.wosnumber | WOS:000188186400019 | en_US |
dc.citation.woscount | 70 | en_US |
顯示於類別: | 期刊論文 |