標題: | FREE-CARRIER ABSORPTION IN QUANTUM-WELL STRUCTURES FOR ACOUSTIC-PHONON SCATTERING |
作者: | WU, CC 交大名義發表 電控工程研究所 National Chiao Tung University Institute of Electrical and Control Engineering |
公開日期: | 1994 |
摘要: | Free-carrier absorption has been studied for quantum well structures fabricated from III-V semiconducting materials where the acoustic phonon scattering is important. The energy band of carriers is assumed to be nonparabolic. We discuss the effect of acoustic phonon scattering on the free-carrier absorption for both deformation-potential coupling and piezoelectric coupling. It is found that the free-carrier absorption coefficient depends upon the polarization of the electromagnetic radiation relative to the layer plane or quantum well, the photon frequency, and the temperature. When the deformation-potential coupling is dominant, the free-carrier absorption coefficient increases with increasing temperature for photons polarized in the layer plane or perpendicular to the layer plane. However, when the piezoelectric coupling is dominant, the free-carrier absorption coefficient increases with increasing temperature for photons polarized in the layer plane, but for photons polarized perpendicularly to the layer plane, the free-carrier absorption coefficient decreases with increasing temperature. Moreover, at high temperatures such as T = 300 K, the free-carrier absorption coefficient oscillates with the film thickness in a small quantum well region and then decreases monotonically with increasing the film thickness. This is different from the result for three-dimensional semiconducting solids. |
URI: | http://hdl.handle.net/11536/2734 http://dx.doi.org/10.1006/spmi.1994.1021 |
ISSN: | 0749-6036 |
DOI: | 10.1006/spmi.1994.1021 |
期刊: | SUPERLATTICES AND MICROSTRUCTURES |
Volume: | 15 |
Issue: | 2 |
起始頁: | 109 |
結束頁: | 112 |
顯示於類別: | 期刊論文 |