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dc.contributor.authorLin, Shih-Yenen_US
dc.contributor.authorChou, Shu-Tingen_US
dc.contributor.authorLin, Wei-Hsunen_US
dc.date.accessioned2014-12-08T15:40:02Z-
dc.date.available2014-12-08T15:40:02Z-
dc.date.issued2009-11-01en_US
dc.identifier.issn1350-4495en_US
dc.identifier.urihttp://dx.doi.org/10.1016/j.infrared.2009.05.007en_US
dc.identifier.urihttp://hdl.handle.net/11536/27354-
dc.description.abstractThe transition mechanisms of a 10-period quantum-dot (QD)/quantum-well (QW) mixed-mode infrared photodetector is investigated in this paper. Both mid-wavelength infrared (MWIR) and long-wavelength infrared (LWIR) responses are observed for the device. The lower normal incident absorption of the LWIR peak suggests that the QW intra-band transition is responsible for the response while the QD intra-band transition for the MWIR response. Due to the coexistence of MWIR and LWIR responses, the MWIR response should be resulted from one-photon transition while the LWIR response from the two-photon transition. To explain the transition mechanisms of the MMIP device, a model is proposed in this paper. The increases of both MWIR and LWIR responses with increasing measurement temperatures observed for the device are attributed to the increase of electrons in the QW ground state/wetting layer state resulted from the increase of one-photon absorption process with increasing temperatures. (C) 2009 Elsevier B.V. All rights reserved.en_US
dc.language.isoen_USen_US
dc.subjectQuantum-dot infrared photodetectorsen_US
dc.subjectQuantum dotsen_US
dc.titleThe transition mechanisms of quantum-dot/quantum-well mixed-mode infrared photodetectorsen_US
dc.typeArticle; Proceedings Paperen_US
dc.identifier.doi10.1016/j.infrared.2009.05.007en_US
dc.identifier.journalINFRARED PHYSICS & TECHNOLOGYen_US
dc.citation.volume52en_US
dc.citation.issue6en_US
dc.citation.spage268en_US
dc.citation.epage271en_US
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentDepartment of Photonicsen_US
dc.identifier.wosnumberWOS:000273240700012-
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