標題: | H-2 and NH3 plasma passivation on poly-Si TFTs with bottom-sub-gate induced electrical junctions |
作者: | Yu, CM Lin, HC Huang, TY Lei, TF 電子工程學系及電子研究所 Department of Electronics Engineering and Institute of Electronics |
公開日期: | 1-十二月-2003 |
摘要: | The effects of NH3 and H-2 plasma passivation on the characteristics of poly-Si thin-film transistors (TFTs) with source/drain extensions induced by a bottom sub-gate were studied. Our results show that although significant improvements in device performance can be obtained by either passivation method, the NH3-plasma-treatment appears to be more effective in reducing the off-state leakage, subthreshold swing, and in improving mobility compared to H-2 plasma passivation. Furthermore, NH3 plasma treatment is also found to be more effective in reducing the anomalous subthreshold hump phenomenon observed in nonplasma-treated short-channel devices. Detailed analysis suggests that all these improvements can be explained by the more effective passivation of traps distributed in both the front and back sides of the channel by NH3 plasma treatment. (C) 2003 The Electrochemical Society. |
URI: | http://dx.doi.org/10.1149/1.1627355 http://hdl.handle.net/11536/27368 |
ISSN: | 0013-4651 |
DOI: | 10.1149/1.1627355 |
期刊: | JOURNAL OF THE ELECTROCHEMICAL SOCIETY |
Volume: | 150 |
Issue: | 12 |
起始頁: | G843 |
結束頁: | G848 |
顯示於類別: | 期刊論文 |