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dc.contributor.authorChang, HCen_US
dc.contributor.authorChang, EYen_US
dc.contributor.authorLien, YCen_US
dc.contributor.authorChu, LHen_US
dc.contributor.authorChang, SWen_US
dc.contributor.authorHuang, RCen_US
dc.contributor.authorLee, HMen_US
dc.date.accessioned2014-12-08T15:40:06Z-
dc.date.available2014-12-08T15:40:06Z-
dc.date.issued2003-11-27en_US
dc.identifier.issn0013-5194en_US
dc.identifier.urihttp://dx.doi.org/10.1049/el:20031133en_US
dc.identifier.urihttp://hdl.handle.net/11536/27384-
dc.description.abstractA low noise pseudomorphic high electron mobility transistor (PHEMT) with copper airbridges using sputtered WNx as the diffusion barrier has been developed. Both the material system and the copper airbridged PHEMT with WNx as the diffusion barrier did not decay even after thermal annealing at 250degreesC for 20 h. The results show that the copper airbridges with WNx diffusion barrier can be used as the interconnects for low noise GaAs PHEMTs.en_US
dc.language.isoen_USen_US
dc.titleUse WNx as diffusion barrier for copper airbridged low noise GaAsPHEMTen_US
dc.typeArticleen_US
dc.identifier.doi10.1049/el:20031133en_US
dc.identifier.journalELECTRONICS LETTERSen_US
dc.citation.volume39en_US
dc.citation.issue24en_US
dc.citation.spage1763en_US
dc.citation.epage1765en_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.department友訊交大聯合研發中心zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.contributor.departmentD Link NCTU Joint Res Ctren_US
dc.identifier.wosnumberWOS:000187081900046-
dc.citation.woscount9-
Appears in Collections:Articles


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