Use WNx as diffusion barrier for copper airbridged low noise GaAsPHEMT

doi:10.1049/el:20031133

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	Chang, HC	en_US
dc.contributor.author	Chang, EY	en_US
dc.contributor.author	Lien, YC	en_US
dc.contributor.author	Chu, LH	en_US
dc.contributor.author	Chang, SW	en_US
dc.contributor.author	Huang, RC	en_US
dc.contributor.author	Lee, HM	en_US
dc.date.accessioned	2014-12-08T15:40:06Z	-
dc.date.available	2014-12-08T15:40:06Z	-
dc.date.issued	2003-11-27	en_US
dc.identifier.issn	0013-5194	en_US
dc.identifier.uri	http://dx.doi.org/10.1049/el:20031133	en_US
dc.identifier.uri	http://hdl.handle.net/11536/27384	-
dc.description.abstract	A low noise pseudomorphic high electron mobility transistor (PHEMT) with copper airbridges using sputtered WNx as the diffusion barrier has been developed. Both the material system and the copper airbridged PHEMT with WNx as the diffusion barrier did not decay even after thermal annealing at 250degreesC for 20 h. The results show that the copper airbridges with WNx diffusion barrier can be used as the interconnects for low noise GaAs PHEMTs.	en_US
dc.language.iso	en_US	en_US
dc.title	Use WNx as diffusion barrier for copper airbridged low noise GaAsPHEMT	en_US
dc.type	Article	en_US
dc.identifier.doi	10.1049/el:20031133	en_US
dc.identifier.journal	ELECTRONICS LETTERS	en_US
dc.citation.volume	39	en_US
dc.citation.issue	24	en_US
dc.citation.spage	1763	en_US
dc.citation.epage	1765	en_US
dc.contributor.department	材料科學與工程學系	zh_TW
dc.contributor.department	友訊交大聯合研發中心	zh_TW
dc.contributor.department	Department of Materials Science and Engineering	en_US
dc.contributor.department	D Link NCTU Joint Res Ctr	en_US
dc.identifier.wosnumber	WOS:000187081900046	-
dc.citation.woscount	9	-
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