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dc.contributor.authorChang, FTen_US
dc.contributor.authorLin, YCen_US
dc.contributor.authorBai, HLen_US
dc.contributor.authorPei, BSen_US
dc.date.accessioned2014-12-08T15:40:07Z-
dc.date.available2014-12-08T15:40:07Z-
dc.date.issued2003-11-01en_US
dc.identifier.issn1047-3289en_US
dc.identifier.urihttp://hdl.handle.net/11536/27403-
dc.description.abstractThe use of a honeycomb zeolite concentrator and an oxidation process is one of the most popular methods demonstrated to control volatile organic compound (VOCs) emissions from waste gases in semiconductor manufacturing plants. This study attempts to characterize the performance of a concentrator in terms of the removal efficiencies of semiconductor VOCs (isopropyl alcohol [IPA], acetone, propylene glycol methyl ether [PGME], and propylene glycol monomethyl ether acetate [PGMEA]) under several parameters that govern the actual operations. Experimental results indicated that at inlet temperatures of under 40 degreesC and a relative humidity of under 80%, the removal efficiency of a zeolite concentrator can be maintained well over 90%. The optimal rotation speed of the concentrator is between 3 and 4.5 rph in this study. The optimal rotation speed increases with the VOCs inlet concentration. Furthermore, reducing the concentration ratio helps to increase the removal efficiency, but it also increases the incineration cost. With reference to competitive adsorption, PGMEA and PGME are more easily adsorbed on a zeolite concentrator than are IPA and acetone because of their high boiling points and molecular weights.en_US
dc.language.isoen_USen_US
dc.titleAdsorption and desorption characteristics of semiconductor volatile organic compounds on the thermal swing honeycomb zeolite concentratoren_US
dc.typeArticleen_US
dc.identifier.journalJOURNAL OF THE AIR & WASTE MANAGEMENT ASSOCIATIONen_US
dc.citation.volume53en_US
dc.citation.issue11en_US
dc.citation.spage1384en_US
dc.citation.epage1390en_US
dc.contributor.department環境工程研究所zh_TW
dc.contributor.departmentInstitute of Environmental Engineeringen_US
dc.identifier.wosnumberWOS:000186294600013-
dc.citation.woscount18-
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