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dc.contributor.authorLee, HCen_US
dc.contributor.authorSun, KWen_US
dc.contributor.authorLee, CPen_US
dc.date.accessioned2014-12-08T15:40:10Z-
dc.date.available2014-12-08T15:40:10Z-
dc.date.issued2003-11-01en_US
dc.identifier.issn0038-1098en_US
dc.identifier.urihttp://dx.doi.org/10.1016/j.ssc.2003.08.012en_US
dc.identifier.urihttp://hdl.handle.net/11536/27429-
dc.description.abstractWe have found theoretically that the reduced dimensionality from bulk GaAs to quantum wells has a strong effect on hot carrier relaxations at highly excited carrier densities. The distinct density of state and the dynamical screening cause hot carriers in quantum wells to relax significantly slower than in the bulk when the carrier density is above a critical value of 2 x 10(18) cm(-3). With the random phase approximation, the dynamical screening in quantum wells appears to be much stronger than that in the bulk and as important as the hot phonon effect at high carrier densities. We also found that the dependence of the average energy-loss rates on the well width in quantum wells becomes more appreciable when Al compositions are high. (C) 2003 Elsevier Ltd. All rights reserved.en_US
dc.language.isoen_USen_US
dc.subjectquantum wellsen_US
dc.subjectsemiconductorsen_US
dc.subjectelectron phonon interactionsen_US
dc.subjectdielectric responseen_US
dc.titleSignificance of dimensionality and dynamical screening on hot carrier relaxation in bulk GaAs and quantum wellsen_US
dc.typeArticleen_US
dc.identifier.doi10.1016/j.ssc.2003.08.012en_US
dc.identifier.journalSOLID STATE COMMUNICATIONSen_US
dc.citation.volume128en_US
dc.citation.issue6-7en_US
dc.citation.spage245en_US
dc.citation.epage250en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000186083200008-
dc.citation.woscount4-
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