High reflectivity distributed Bragg reflectors for 1.55 mu m VCSELs using InP/airgap

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DC Field	Value	Language
dc.contributor.author	Tsai, JY	en_US
dc.contributor.author	Lu, TC	en_US
dc.contributor.author	Wang, SC	en_US
dc.date.accessioned	2014-12-08T15:40:15Z	-
dc.date.available	2014-12-08T15:40:15Z	-
dc.date.issued	2003-10-01	en_US
dc.identifier.issn	0038-1101	en_US
dc.identifier.uri	http://dx.doi.org/10.1016/S0038-1101(03)00144-8	en_US
dc.identifier.uri	http://hdl.handle.net/11536/27478	-
dc.description.abstract	A high reflecting InP/airgap distributed Bragg reflector (DBR) using InGaAs as sacrificial layers is demonstrated. The 3-pair InP/airgap DBR is formed by etching the InGaAs layers of the MOCVD grown InP/InGaAs structure using H2SO4 solution. A rigid and stable InP/airgap DBR with a peak reflectivity of 99.9% at 1.54 mum and a stopband width of about 200 nm is achieved. (C) 2003 Elsevier Ltd. All rights reserved.	en_US
dc.language.iso	en_US	en_US
dc.subject	DBR	en_US
dc.subject	VCSEL	en_US
dc.subject	reflectivity	en_US
dc.title	High reflectivity distributed Bragg reflectors for 1.55 mu m VCSELs using InP/airgap	en_US
dc.type	Article	en_US
dc.identifier.doi	10.1016/S0038-1101(03)00144-8	en_US
dc.identifier.journal	SOLID-STATE ELECTRONICS	en_US
dc.citation.volume	47	en_US
dc.citation.issue	10	en_US
dc.citation.spage	1825	en_US
dc.citation.epage	1828	en_US
dc.contributor.department	光電工程學系	zh_TW
dc.contributor.department	Department of Photonics	en_US
dc.identifier.wosnumber	WOS:000185129400037	-
dc.citation.woscount	3	-
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