Low-temperature-processed polycrystalline silicon thin-film transistors using a new two-step crystallization technique

Abstract

Low-temperature-processed (LTP) Polycrystalline silicon thin-film transistors (poly-Si TFTs) fabricated with a poly-Si film crystallized by a new two-step crystallization (NTSC) technique were investigated. The NTSC is characterized by the combination of excimer-laser-induced formation of nucleation centers and short-time low- temperature furnace annealing to create clear crystalline grains with very few in-grain defects. The LTP poly-Si TFTs fabricated with a NTSC poly-Si film not only exhibit better performance but also significantly shorten the crystallization time (about 6 h at 600degreesC) as compared to those fabricated using conventional solid phase crystallization (about 20 h or longer at 600degreesC).