標題: | Improved performance of F-ions-implanted poly-Si thin-film transistors using solid phase crystallization and excimer laser crystallization |
作者: | Tu, Chun-Hao Chang, Ting-Chang Liu, Po-Tsun Yang, Che-Yu Feng, Li-Wei Tsai, Chia-Chou Chang, Li-Ting Wu, Yung-Chun Sze, Simon M. Chang, Chun-Yen 電子工程學系及電子研究所 光電工程學系 顯示科技研究所 Department of Electronics Engineering and Institute of Electronics Department of Photonics Institute of Display |
關鍵字: | excimer laser crystallization (ELC);F-ions implant;polycrystalline silicon thin-film transistors (poly-Si TFTs);SPC |
公開日期: | 1-三月-2007 |
摘要: | Polycrystalline silicon thin-film transistors (Poly-Si TFTs) with F-ions-implantation were investigated in this study. The electrical characteristics and reliability of the F-ions-implanted poly-Si TFTs were reported for solid phase crystallization (SPC) and excimer laser crystallization (ELC) methods respectively. The thermal annealing causes F-ions to pile up at the poly-Si interface, without the initial pad oxide deposition. With the introduction of fluorine in poly-Si film, the trap state density was effectively reduced. Also, the presence of strong Si-F bonds enhances electrical endurance against hot carrier impact by using F-ions-implantation. These improvements in electrical characteristics are even obvious for the ELC poly-Si TFTs compared to the SPC ones. |
URI: | http://dx.doi.org/10.1109/JDT.2006.890707 http://hdl.handle.net/11536/11105 |
ISSN: | 1551-319X |
DOI: | 10.1109/JDT.2006.890707 |
期刊: | JOURNAL OF DISPLAY TECHNOLOGY |
Volume: | 3 |
Issue: | 1 |
起始頁: | 45 |
結束頁: | 51 |
顯示於類別: | 期刊論文 |