標題: | Performance enhancement of excimer laser crystallized poly-Si thin film transistors with fluorine implantation technology |
作者: | Tu, Chun-Hao Chang, Ting-Chang Liu, Po-Tsun Yang, Che-Yu Feng, Li-Wei Wu, Yung-Chun Sze, Simon M. Chang, Chun-Yen 電子工程學系及電子研究所 光電工程學系 顯示科技研究所 Department of Electronics Engineering and Institute of Electronics Department of Photonics Institute of Display |
關鍵字: | poly-Si TFTs;fluorine;excimer laser crystallization |
公開日期: | 31-三月-2008 |
摘要: | Polycrystalline silicon thin film transistors (poly-Si TFTs) with the ion implantation of fluorine elements were investigated in this study. The electrical performance and reliability were reported comprehensively. Experimental work has shown the electrical characteristics of excimer laser crystallized F-ions-implanted poly-Si TFTs are improved effectively, especially for field effect mobility. It is also found that the fluorine piled up at the poly-Si interface during thermal annealing, for the TFT fabricated without a prior deposition of pad oxide. The stronger Si-F bonds replace the Si-Si/Si-H, leading to the superior electrical reliability. However, the dose of F ions is critical in poly-Si, or the electrical characteristics of TFT devices will be degraded. (c) 2007 Published by Elsevier B.V. |
URI: | http://dx.doi.org/10.1016/j.tsf.2007.08.038 http://hdl.handle.net/11536/9552 |
ISSN: | 0040-6090 |
DOI: | 10.1016/j.tsf.2007.08.038 |
期刊: | THIN SOLID FILMS |
Volume: | 516 |
Issue: | 10 |
起始頁: | 3128 |
結束頁: | 3132 |
顯示於類別: | 期刊論文 |