THE EFFECTS OF H-2-O-2-PLASMA TREATMENT ON THE CHARACTERISTICS OF POLYSILICON THIN-FILM TRANSISTORS

doi:10.1109/16.249479

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	CHERN, HN	en_US
dc.contributor.author	LEE, CL	en_US
dc.contributor.author	LEI, TF	en_US
dc.date.accessioned	2014-12-08T15:04:15Z	-
dc.date.available	2014-12-08T15:04:15Z	-
dc.date.issued	1993-12-01	en_US
dc.identifier.issn	0018-9383	en_US
dc.identifier.uri	http://dx.doi.org/10.1109/16.249479	en_US
dc.identifier.uri	http://hdl.handle.net/11536/2751	-
dc.description.abstract	The effects of H-2-plasma followed by O-2-plasma treatment on n-channel polysilicon TFT's were investigated. It was found that the H-2-O-2-plasma treatment is more effective in passivating the trap states of polysilicon films than do the H-2-plasma treatment only or the O-2-plasma treatment only. Hence, it is more effective in improving the device performance on the subthreshold swing, carrier mobility and the current ON/OFF ratio. It is also found that thermal annealing on plasma-treated devices increases the deep states but has no effect on the tail states of the devices.	en_US
dc.language.iso	en_US	en_US
dc.title	THE EFFECTS OF H-2-O-2-PLASMA TREATMENT ON THE CHARACTERISTICS OF POLYSILICON THIN-FILM TRANSISTORS	en_US
dc.type	Article	en_US
dc.identifier.doi	10.1109/16.249479	en_US
dc.identifier.journal	IEEE TRANSACTIONS ON ELECTRON DEVICES	en_US
dc.citation.volume	40	en_US
dc.citation.issue	12	en_US
dc.citation.spage	2301	en_US
dc.citation.epage	2306	en_US
dc.contributor.department	電子工程學系及電子研究所	zh_TW
dc.contributor.department	奈米中心	zh_TW
dc.contributor.department	次微米人才培訓中心	zh_TW
dc.contributor.department	Department of Electronics Engineering and Institute of Electronics	en_US
dc.contributor.department	Nano Facility Center	en_US
dc.contributor.department	CTR SUBMICRON PROFESS TRAINING	en_US
dc.identifier.wosnumber	WOS:A1993MP36300021	-
dc.citation.woscount	22	-
顯示於類別：	期刊論文

文件中的檔案：

A1993MP36300021.pdf

若為 zip 檔案，請下載檔案解壓縮後，用瀏覽器開啟資料夾中的 index.html 瀏覽全文。