H-2/O-2 PLASMA ON POLYSILICON THIN-FILM TRANSISTOR

Abstract

This letter reports that the H-2 plasma followed by the O2 plasma is more effective to passivate grain boundary states in the polysilicon thin film. Polysilicon thin-film transistors (TFT's) made after applying H-2/O2 Plasma treatment can exhibit a turn-on threshold voltage of -0.1 V, a subthreshold swing of 0.154 V/decade, an ON/OFF current ratio I(on)/I(off) over 1 x 10(8), and an electron mobility of 40.2 cm2/V . S.