標題: | H-2/O-2 PLASMA ON POLYSILICON THIN-FILM TRANSISTOR |
作者: | CHERN, HN LEE, CL LEI, TF 電子工程學系及電子研究所 Department of Electronics Engineering and Institute of Electronics |
公開日期: | 1-Mar-1993 |
摘要: | This letter reports that the H-2 plasma followed by the O2 plasma is more effective to passivate grain boundary states in the polysilicon thin film. Polysilicon thin-film transistors (TFT's) made after applying H-2/O2 Plasma treatment can exhibit a turn-on threshold voltage of -0.1 V, a subthreshold swing of 0.154 V/decade, an ON/OFF current ratio I(on)/I(off) over 1 x 10(8), and an electron mobility of 40.2 cm2/V . S. |
URI: | http://dx.doi.org/10.1109/55.215129 http://hdl.handle.net/11536/3103 |
ISSN: | 0741-3106 |
DOI: | 10.1109/55.215129 |
期刊: | IEEE ELECTRON DEVICE LETTERS |
Volume: | 14 |
Issue: | 3 |
起始頁: | 115 |
結束頁: | 117 |
Appears in Collections: | Articles |
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