THE EFFECTS OF H-2-O-2-PLASMA TREATMENT ON THE CHARACTERISTICS OF POLYSILICON THIN-FILM TRANSISTORS

Abstract

The effects of H-2-plasma followed by O-2-plasma treatment on n-channel polysilicon TFT's were investigated. It was found that the H-2-O-2-plasma treatment is more effective in passivating the trap states of polysilicon films than do the H-2-plasma treatment only or the O-2-plasma treatment only. Hence, it is more effective in improving the device performance on the subthreshold swing, carrier mobility and the current ON/OFF ratio. It is also found that thermal annealing on plasma-treated devices increases the deep states but has no effect on the tail states of the devices.