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dc.contributor.authorLeu, CMen_US
dc.contributor.authorChang, YTen_US
dc.contributor.authorWei, KHen_US
dc.date.accessioned2014-12-08T15:40:18Z-
dc.date.available2014-12-08T15:40:18Z-
dc.date.issued2003-09-23en_US
dc.identifier.issn0897-4756en_US
dc.identifier.urihttp://dx.doi.org/10.1021/cm030393ben_US
dc.identifier.urihttp://hdl.handle.net/11536/27522-
dc.description.abstractLow-dielectric-constant nanoporous films (dielectric constant, k = 2.4) with thermal integrity and controllable mechanical strength have been prepared by covalently tethering nanoporous polyhedral oligomeric silsesquioxane (POSS) molecules, 1-nm size, to the side chains of polyimide. The tethered POSS molecules in the amorphous polyimide retain a nanoporous crystal structure, but form an additional ordered architecture due to microphase separation. With this approach, the dielectric constant of the film can be tuned by the amount of POSS molecules introduced in the nanocomposite film; the polyimide molecules offer additional advantages of maintaining certain thermal and mechanical strengths.en_US
dc.language.isoen_USen_US
dc.titlePolyimide-side-chain tethered polyhedral oligomeric silsesquioxane nanocomposites for low-dielectric film applicationsen_US
dc.typeArticleen_US
dc.identifier.doi10.1021/cm030393ben_US
dc.identifier.journalCHEMISTRY OF MATERIALSen_US
dc.citation.volume15en_US
dc.citation.issue19en_US
dc.citation.spage3721en_US
dc.citation.epage3727en_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.identifier.wosnumberWOS:000185410900024-
dc.citation.woscount157-
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