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dc.contributor.authorLuo, CWen_US
dc.contributor.authorChen, MHen_US
dc.contributor.authorLiu, SJen_US
dc.contributor.authorWu, KHen_US
dc.contributor.authorJuang, JYen_US
dc.contributor.authorUen, TMen_US
dc.contributor.authorLin, JYen_US
dc.contributor.authorChen, JMen_US
dc.contributor.authorGou, YSen_US
dc.date.accessioned2014-12-08T15:40:20Z-
dc.date.available2014-12-08T15:40:20Z-
dc.date.issued2003-09-01en_US
dc.identifier.issn0021-8979en_US
dc.identifier.urihttp://dx.doi.org/10.1063/1.1590057en_US
dc.identifier.urihttp://hdl.handle.net/11536/27539-
dc.description.abstractPolarization-dependent x-ray absorption near-edge spectra (XANES) of the O 1s has been measured on a highly in-plane aligned a-axis YBa2Cu3O7-delta (YBCO) thin film. The in-plane XANES, with the electric field E of the linearly polarized synchrotron light being parallel to the b or c axis of YBCO films (E//b or E//c) were obtained in a normal-incidence alignment. The XANES for E//a was then calculated from the data obtained by varying the angle. The results lend strong support to those obtained by using detwinned YBCO single crystals in all crystalline orientations, including the extrapolated c-axis spectra. (C) 2003 American Institute of Physics.en_US
dc.language.isoen_USen_US
dc.titleAnisotropic electronic structure of in-plane aligned a-axis YBa2Cu3O7-delta thin filmsen_US
dc.typeArticleen_US
dc.identifier.doi10.1063/1.1590057en_US
dc.identifier.journalJOURNAL OF APPLIED PHYSICSen_US
dc.citation.volume94en_US
dc.citation.issue5en_US
dc.citation.spage3648en_US
dc.citation.epage3650en_US
dc.contributor.department電子物理學系zh_TW
dc.contributor.department物理研究所zh_TW
dc.contributor.departmentDepartment of Electrophysicsen_US
dc.contributor.departmentInstitute of Physicsen_US
dc.identifier.wosnumberWOS:000184844200124-
dc.citation.woscount10-
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