Wafer bonding by Ni-induced crystallization of amorphous silicon

doi:10.1143/JJAP.42.5527

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	Chao, CP	en_US
dc.contributor.author	Wu, YCS	en_US
dc.contributor.author	Lee, TL	en_US
dc.contributor.author	Wang, YH	en_US
dc.date.accessioned	2014-12-08T15:40:21Z	-
dc.date.available	2014-12-08T15:40:21Z	-
dc.date.issued	2003-09-01	en_US
dc.identifier.issn	0021-4922	en_US
dc.identifier.uri	http://dx.doi.org/10.1143/JJAP.42.5527	en_US
dc.identifier.uri	http://hdl.handle.net/11536/27549	-
dc.description.abstract	Wafer bonding by Ni-induced crystallization of amorphous silicon was investigated. It was found that wafers can be bonded through the crystallization of amorphous silicon at temperatures below 550 degreesC. Moreover, when 250 V was applied across the stacked samples, the bonding temperatures could be decreased to as low as 350 degreesC.	en_US
dc.language.iso	en_US	en_US
dc.subject	wafer bonding	en_US
dc.subject	amorphous silicon	en_US
dc.subject	metal-induced crystallization of amorphous silicon	en_US
dc.subject	nickel and electric field	en_US
dc.title	Wafer bonding by Ni-induced crystallization of amorphous silicon	en_US
dc.type	Article	en_US
dc.identifier.doi	10.1143/JJAP.42.5527	en_US
dc.identifier.journal	JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS	en_US
dc.citation.volume	42	en_US
dc.citation.issue	9A	en_US
dc.citation.spage	5527	en_US
dc.citation.epage	5530	en_US
dc.contributor.department	材料科學與工程學系	zh_TW
dc.contributor.department	Department of Materials Science and Engineering	en_US
dc.identifier.wosnumber	WOS:000185565300025	-
dc.citation.woscount	4	-
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