标题: | Thin-film reactions during diffusion soldering of Cu/Ti/Si and Au/Cu/Al2O3 with Sn interlayers |
作者: | Liang, MW Hsieh, TE Chang, SY Chuang, TH 材料科学与工程学系 Department of Materials Science and Engineering |
关键字: | diffusion soldering;die attachment;intermetallic compounds;kinetics analysis;bonding strength |
公开日期: | 1-九月-2003 |
摘要: | The multilayer thin-film systems of Cu/Ti/Si and Au/Cu/Al2O3 were diffusion-soldered at temperatures between 250degreesC and 400degreesC by inserting a Sn thin-film interlayer. Experimental results showed that a double layer of intermetallic compounds (IMCs) eta-(Cu0.99Au0.01)(6)Sn(5/)delta-(Au0.87Cu0.13)Sn was formed at the interface. Kinetics analyses revealed that the growth of intermetallics was diffusion-controlled. The activation energies as calculated from Arrhenius plots of the growth rate constants for (Cu0.99Au0.01)(6)Sn-5 and (Au0.87Cu0.13)Sn are 16.9 kJ/mol and 53.7 kJ/mol, respectively. Finally, a satisfactory tensile strength of 132 kg/cm(2) could be attained under the bonding condition of 300degreesC for 20 min. |
URI: | http://hdl.handle.net/11536/27556 |
ISSN: | 0361-5235 |
期刊: | JOURNAL OF ELECTRONIC MATERIALS |
Volume: | 32 |
Issue: | 9 |
起始页: | 952 |
结束页: | 956 |
显示于类别: | Articles |
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