标题: Thin-film reactions during diffusion soldering of Cu/Ti/Si and Au/Cu/Al2O3 with Sn interlayers
作者: Liang, MW
Hsieh, TE
Chang, SY
Chuang, TH
材料科学与工程学系
Department of Materials Science and Engineering
关键字: diffusion soldering;die attachment;intermetallic compounds;kinetics analysis;bonding strength
公开日期: 1-九月-2003
摘要: The multilayer thin-film systems of Cu/Ti/Si and Au/Cu/Al2O3 were diffusion-soldered at temperatures between 250degreesC and 400degreesC by inserting a Sn thin-film interlayer. Experimental results showed that a double layer of intermetallic compounds (IMCs) eta-(Cu0.99Au0.01)(6)Sn(5/)delta-(Au0.87Cu0.13)Sn was formed at the interface. Kinetics analyses revealed that the growth of intermetallics was diffusion-controlled. The activation energies as calculated from Arrhenius plots of the growth rate constants for (Cu0.99Au0.01)(6)Sn-5 and (Au0.87Cu0.13)Sn are 16.9 kJ/mol and 53.7 kJ/mol, respectively. Finally, a satisfactory tensile strength of 132 kg/cm(2) could be attained under the bonding condition of 300degreesC for 20 min.
URI: http://hdl.handle.net/11536/27556
ISSN: 0361-5235
期刊: JOURNAL OF ELECTRONIC MATERIALS
Volume: 32
Issue: 9
起始页: 952
结束页: 956
显示于类别:Articles


文件中的档案:

  1. 000185212800007.pdf

If it is a zip file, please download the file and unzip it, then open index.html in a browser to view the full text content.