標題: FABRICATION AND PROPERTIES OF ALUMINO-BORO-SILICATE GLASS-CERAMIC SYSTEMS
作者: CHIOU, BS
TZENG, JM
DUH, JG
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
公開日期: 1-十二月-1993
摘要: In current microelectronics packaging applications, low-temperature fired substrates with low dielectric constant are required. Formulations of SiO2, B2O3, Al2O3, and CaO have been used as substrate materials which can be sintered as low as 1000-degrees-C in air. The electrical behaviour, thermal expansion coefficient, and mechanical property of the fabricated substrate materials are evaluated. The as-sintered substrates possess the following characteristics: low dielectric constant of 4-5 at 1 MHz; a loss factor smaller than 0.2% at 1 MHz; and a thermal expansion of 3.57 x 10(-6)-degrees-C-1 which is very close to that of silicon (3.5 x 10(-6)-degrees-C-1).
URI: http://dx.doi.org/10.1007/BF00179228
http://hdl.handle.net/11536/2755
ISSN: 0957-4522
DOI: 10.1007/BF00179228
期刊: JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
Volume: 4
Issue: 4
起始頁: 301
結束頁: 304
顯示於類別:期刊論文