Title: Selective growth of carbon nanotubes on prepatterned amorphous silicon thin films by electroless plating Ni
Authors: Chao, CW
Wu, YCS
Hu, GR
Feng, MS
材料科學與工程學系
Department of Materials Science and Engineering
Issue Date: 1-Sep-2003
Abstract: Selective growth of carbon nanotubes (CNTs) synthesized at low temperature by electroless plating Ni was proposed for the first time in this study. After electroless plating, Ni nanoparticles were selectively deposited on the prepatterned amorphous silicon (a-Si) thin films. After plasma-enhanced chemical vapor deposition, well-aligned CNTs were observed only on the Ni-coated a-Si islands. The diameter, density, and the field emission of CNTs could be controlled easily by the Ni plating time. The achievement of controlling the site density and growth area is significant for applications of carbon nanotubes as field emission devices, nanoelectrode arrays, etc. (C) 2003 The Electrochemical Society.
URI: http://dx.doi.org/10.1149/1.1596953
http://hdl.handle.net/11536/27580
ISSN: 0013-4651
DOI: 10.1149/1.1596953
Journal: JOURNAL OF THE ELECTROCHEMICAL SOCIETY
Volume: 150
Issue: 9
Begin Page: C631
End Page: C634
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