1. You are Here：

Full metadata record
DC FieldValueLanguage
dc.contributor.authorLiu, TAen_US
dc.contributor.authorTani, Men_US
dc.contributor.authorNakajima, Men_US
dc.contributor.authorHangyo, Men_US
dc.contributor.authorPan, CLen_US
dc.date.accessioned2014-12-08T15:40:28Z-
dc.date.available2014-12-08T15:40:28Z-
dc.date.issued2003-08-18en_US
dc.identifier.issn0003-6951en_US
dc.identifier.urihttp://dx.doi.org/10.1063/1.1604191en_US
dc.identifier.urihttp://hdl.handle.net/11536/27630-
dc.description.abstractThe photoconductive antennas based on multi-energy arsenic-ion-implanted GaAs and semi-insulating GaAs are demonstrated to have a useful bandwidth beyond 20 THz for a gating laser pulse width of 15 fs. The bandwidth and signal-to-noise ratio are compared with those of reference photoconductive antennas based on low-temperature grown GaAs. (C) 2003 American Institute of Physics.en_US
dc.language.isoen_USen_US
dc.titleUltrabroadband terahertz field detection by photoconductive antennas based on multi-energy arsenic-ion-implanted GaAs and semi-insulating GaAsen_US
dc.typeArticleen_US
dc.identifier.doi10.1063/1.1604191en_US
dc.identifier.journalAPPLIED PHYSICS LETTERSen_US
dc.citation.volume83en_US
dc.citation.issue7en_US
dc.citation.spage1322en_US
dc.citation.epage1324en_US
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentDepartment of Photonicsen_US
dc.identifier.wosnumberWOS:000184748600014-
dc.citation.woscount39-
Appears in Collections:Articles


Files in This Item:

  1. 000184748600014.pdf

If it is a zip file, please download the file and unzip it, then open index.html in a browser to view the full text content.

Related Contents
Loading...