標題: | Dependence of terahertz radiation on gap sizes of biased multi-energy arsenic-ion-implanted and semi-insulating GaAs antennas |
作者: | Liu, T. -A. Chou, R. -H. Pan, C. -L. 光電工程學系 Department of Photonics |
公開日期: | 1-六月-2009 |
摘要: | We investigate the characteristics of terahertz radiation pulses using biased multi-energy arsenic-ion-implanted and semi-insulating GaAs photoconductive antennas with different gap sizes in terahertz time-domain spectroscopy. At a specific fluence excitation, with increasing antenna gap size, the absolute values of the (peak) normalized terahertz waveform minimum (valley), as well as the bandwidth, reveal an increasing trend for multi-energy arsenic-ion-implanted GaAs antennas and a decreasing trend for semi-insulating GaAs antennas. We find that the largest reachable bias fields applied to arsenic-ion-implanted GaAs antennas are higher than those applied to semi-insulating GaAs antennas. On the basis of pump fluence dependences of peak terahertz amplitude, we deduce that multi-energy arsenic-ion-implanted GaAs antennas have the ability to acquire higher THz power at even higher pump fluence in comparison with semi-insulating GaAs antennas. |
URI: | http://dx.doi.org/10.1007/s00340-008-3332-8 http://hdl.handle.net/11536/7127 |
ISSN: | 0946-2171 |
DOI: | 10.1007/s00340-008-3332-8 |
期刊: | APPLIED PHYSICS B-LASERS AND OPTICS |
Volume: | 95 |
Issue: | 4 |
起始頁: | 739 |
結束頁: | 744 |
顯示於類別: | 期刊論文 |