標題: Dependence of terahertz radiation on gap sizes of biased multi-energy arsenic-ion-implanted and semi-insulating GaAs antennas
作者: Liu, T. -A.
Chou, R. -H.
Pan, C. -L.
光電工程學系
Department of Photonics
公開日期: 1-Jun-2009
摘要: We investigate the characteristics of terahertz radiation pulses using biased multi-energy arsenic-ion-implanted and semi-insulating GaAs photoconductive antennas with different gap sizes in terahertz time-domain spectroscopy. At a specific fluence excitation, with increasing antenna gap size, the absolute values of the (peak) normalized terahertz waveform minimum (valley), as well as the bandwidth, reveal an increasing trend for multi-energy arsenic-ion-implanted GaAs antennas and a decreasing trend for semi-insulating GaAs antennas. We find that the largest reachable bias fields applied to arsenic-ion-implanted GaAs antennas are higher than those applied to semi-insulating GaAs antennas. On the basis of pump fluence dependences of peak terahertz amplitude, we deduce that multi-energy arsenic-ion-implanted GaAs antennas have the ability to acquire higher THz power at even higher pump fluence in comparison with semi-insulating GaAs antennas.
URI: http://dx.doi.org/10.1007/s00340-008-3332-8
http://hdl.handle.net/11536/7127
ISSN: 0946-2171
DOI: 10.1007/s00340-008-3332-8
期刊: APPLIED PHYSICS B-LASERS AND OPTICS
Volume: 95
Issue: 4
起始頁: 739
結束頁: 744
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