Ultrabroadband terahertz field detection by photoconductive antennas based on multi-energy arsenic-ion-implanted GaAs and semi-insulating GaAs

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DC 欄位	值	語言
dc.contributor.author	Liu, TA	en_US
dc.contributor.author	Tani, M	en_US
dc.contributor.author	Nakajima, M	en_US
dc.contributor.author	Hangyo, M	en_US
dc.contributor.author	Pan, CL	en_US
dc.date.accessioned	2014-12-08T15:40:28Z	-
dc.date.available	2014-12-08T15:40:28Z	-
dc.date.issued	2003-08-18	en_US
dc.identifier.issn	0003-6951	en_US
dc.identifier.uri	http://dx.doi.org/10.1063/1.1604191	en_US
dc.identifier.uri	http://hdl.handle.net/11536/27630	-
dc.description.abstract	The photoconductive antennas based on multi-energy arsenic-ion-implanted GaAs and semi-insulating GaAs are demonstrated to have a useful bandwidth beyond 20 THz for a gating laser pulse width of 15 fs. The bandwidth and signal-to-noise ratio are compared with those of reference photoconductive antennas based on low-temperature grown GaAs. (C) 2003 American Institute of Physics.	en_US
dc.language.iso	en_US	en_US
dc.title	Ultrabroadband terahertz field detection by photoconductive antennas based on multi-energy arsenic-ion-implanted GaAs and semi-insulating GaAs	en_US
dc.type	Article	en_US
dc.identifier.doi	10.1063/1.1604191	en_US
dc.identifier.journal	APPLIED PHYSICS LETTERS	en_US
dc.citation.volume	83	en_US
dc.citation.issue	7	en_US
dc.citation.spage	1322	en_US
dc.citation.epage	1324	en_US
dc.contributor.department	光電工程學系	zh_TW
dc.contributor.department	Department of Photonics	en_US
dc.identifier.wosnumber	WOS:000184748600014	-
dc.citation.woscount	39	-
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