完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | Lee, TC | en_US |
dc.contributor.author | Lin, JJ | en_US |
dc.contributor.author | Chang, SF | en_US |
dc.date.accessioned | 2019-04-03T06:38:27Z | - |
dc.date.available | 2019-04-03T06:38:27Z | - |
dc.date.issued | 2003-08-15 | en_US |
dc.identifier.issn | 2469-9950 | en_US |
dc.identifier.uri | http://dx.doi.org/10.1103/PhysRevB.68.073407 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/27639 | - |
dc.description.abstract | We have made a series of thick Sc films doped with different amounts of Ag, which results in a systematic decrease in the resistivities, i.e., disorder, of the films. From measurements of the low-field magnetoresistances and comparison with three-dimensional weak-localization theoretical predictions, the electron dephasing times are extracted in every film. We find a crossover of the inelastic electron process from the critical electron-electron scattering to the electron-phonon scattering as the disorder decreases and the system progressively moves away from the Anderson localization. | en_US |
dc.language.iso | en_US | en_US |
dc.title | Observation of a crossover of the inelastic electron scattering in Sc100-xAgx thick films | en_US |
dc.type | Article | en_US |
dc.identifier.doi | 10.1103/PhysRevB.68.073407 | en_US |
dc.identifier.journal | PHYSICAL REVIEW B | en_US |
dc.citation.volume | 68 | en_US |
dc.citation.issue | 7 | en_US |
dc.citation.spage | 0 | en_US |
dc.citation.epage | 0 | en_US |
dc.contributor.department | 電子物理學系 | zh_TW |
dc.contributor.department | 物理研究所 | zh_TW |
dc.contributor.department | Department of Electrophysics | en_US |
dc.contributor.department | Institute of Physics | en_US |
dc.identifier.wosnumber | WOS:000185241200027 | en_US |
dc.citation.woscount | 1 | en_US |
顯示於類別: | 期刊論文 |