完整後設資料紀錄
DC 欄位語言
dc.contributor.authorLee, TCen_US
dc.contributor.authorLin, JJen_US
dc.contributor.authorChang, SFen_US
dc.date.accessioned2019-04-03T06:38:27Z-
dc.date.available2019-04-03T06:38:27Z-
dc.date.issued2003-08-15en_US
dc.identifier.issn2469-9950en_US
dc.identifier.urihttp://dx.doi.org/10.1103/PhysRevB.68.073407en_US
dc.identifier.urihttp://hdl.handle.net/11536/27639-
dc.description.abstractWe have made a series of thick Sc films doped with different amounts of Ag, which results in a systematic decrease in the resistivities, i.e., disorder, of the films. From measurements of the low-field magnetoresistances and comparison with three-dimensional weak-localization theoretical predictions, the electron dephasing times are extracted in every film. We find a crossover of the inelastic electron process from the critical electron-electron scattering to the electron-phonon scattering as the disorder decreases and the system progressively moves away from the Anderson localization.en_US
dc.language.isoen_USen_US
dc.titleObservation of a crossover of the inelastic electron scattering in Sc100-xAgx thick filmsen_US
dc.typeArticleen_US
dc.identifier.doi10.1103/PhysRevB.68.073407en_US
dc.identifier.journalPHYSICAL REVIEW Ben_US
dc.citation.volume68en_US
dc.citation.issue7en_US
dc.citation.spage0en_US
dc.citation.epage0en_US
dc.contributor.department電子物理學系zh_TW
dc.contributor.department物理研究所zh_TW
dc.contributor.departmentDepartment of Electrophysicsen_US
dc.contributor.departmentInstitute of Physicsen_US
dc.identifier.wosnumberWOS:000185241200027en_US
dc.citation.woscount1en_US
顯示於類別:期刊論文


文件中的檔案:

  1. 1a1b76df1c742dc9c8138e9c36dc278b.pdf

若為 zip 檔案,請下載檔案解壓縮後,用瀏覽器開啟資料夾中的 index.html 瀏覽全文。