標題: | Inelastic electron dephasing times in CuxGe100-x alloys |
作者: | Lin, JJ Sheng, PJ Hsu, SY 電子物理學系 物理研究所 Department of Electrophysics Institute of Physics |
關鍵字: | dephasing times;disordered metals;electron-electron relaxation;electron-phonon relaxation |
公開日期: | 1-五月-2000 |
摘要: | We have studied the inelastic electron dephasing scattering times, tau(i). in disordered CuxGe100-x(35 less than or equal to x less than or equal to 60) alloys between I and 15 K. The values of tau(i)(-1) (similar to T-p), and especially the exponent of temperature p, are extracted from weak localization studies. We find that the value of p continuously decreases from similar to 3 to similar to 1 as x gradually decreases from 60 to 35. Our observation is understood in terms of a crossover of the inelastic electron dephasing in impure metals from e-Fh scattering to critical e-e scattering as the disorder greatly increases and the system moves significantly toward the mobility edge. (C) 2000 Elsevier Science B.V. All. rights reserved. |
URI: | http://dx.doi.org/10.1016/S0921-4526(99)01836-0 http://hdl.handle.net/11536/30545 |
ISSN: | 0921-4526 |
DOI: | 10.1016/S0921-4526(99)01836-0 |
期刊: | PHYSICA B |
Volume: | 280 |
Issue: | 1-4 |
起始頁: | 460 |
結束頁: | 461 |
顯示於類別: | 會議論文 |