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dc.contributor.authorLiu, SJen_US
dc.contributor.authorJuang, JYen_US
dc.contributor.authorWu, KHen_US
dc.contributor.authorUen, TMen_US
dc.contributor.authorGou, YSen_US
dc.contributor.authorLin, JYen_US
dc.date.accessioned2014-12-08T15:40:31Z-
dc.date.available2014-12-08T15:40:31Z-
dc.date.issued2003-08-01en_US
dc.identifier.issn0577-9073en_US
dc.identifier.urihttp://hdl.handle.net/11536/27660-
dc.description.abstractThe magnetic and magnetotransport properties of predominantly (110)-oriented CrO2 films grown on TiO2-buffered LaAlO3 substrates were investigated. The atomic force microscopic images revealed that the as-grown CrO2 films are granular. The magnetic measurements indicated that in-plane coercive fields are about 60 Oe and 100 Oe at 300 K and 7 K, respectively. The as-grown films are semiconductive below 75 K; a magnetoresistance with a DeltaR/R-0 ratio of -13% in a magnetic field of 5 T was observed at 5 K, which is absent in high-quality epitaxial films. The coincidence between the coercive field and the peaks of the magnetoresistive loop measured at low temperatures indicates that spin-dependent scattering plays a crucial role in the transport properties.en_US
dc.language.isoen_USen_US
dc.titleGrain-boundary magnetoresistance of CrO2 films grown on TiO2-buffered LaAlO3 substratesen_US
dc.typeArticleen_US
dc.identifier.journalCHINESE JOURNAL OF PHYSICSen_US
dc.citation.volume41en_US
dc.citation.issue4en_US
dc.citation.spage406en_US
dc.citation.epage413en_US
dc.contributor.department電子物理學系zh_TW
dc.contributor.department物理研究所zh_TW
dc.contributor.departmentDepartment of Electrophysicsen_US
dc.contributor.departmentInstitute of Physicsen_US
dc.identifier.wosnumberWOS:000184795200009-
dc.citation.woscount1-
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