完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | Liu, SJ | en_US |
dc.contributor.author | Juang, JY | en_US |
dc.contributor.author | Wu, KH | en_US |
dc.contributor.author | Uen, TM | en_US |
dc.contributor.author | Gou, YS | en_US |
dc.contributor.author | Lin, JY | en_US |
dc.date.accessioned | 2014-12-08T15:40:31Z | - |
dc.date.available | 2014-12-08T15:40:31Z | - |
dc.date.issued | 2003-08-01 | en_US |
dc.identifier.issn | 0577-9073 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/27660 | - |
dc.description.abstract | The magnetic and magnetotransport properties of predominantly (110)-oriented CrO2 films grown on TiO2-buffered LaAlO3 substrates were investigated. The atomic force microscopic images revealed that the as-grown CrO2 films are granular. The magnetic measurements indicated that in-plane coercive fields are about 60 Oe and 100 Oe at 300 K and 7 K, respectively. The as-grown films are semiconductive below 75 K; a magnetoresistance with a DeltaR/R-0 ratio of -13% in a magnetic field of 5 T was observed at 5 K, which is absent in high-quality epitaxial films. The coincidence between the coercive field and the peaks of the magnetoresistive loop measured at low temperatures indicates that spin-dependent scattering plays a crucial role in the transport properties. | en_US |
dc.language.iso | en_US | en_US |
dc.title | Grain-boundary magnetoresistance of CrO2 films grown on TiO2-buffered LaAlO3 substrates | en_US |
dc.type | Article | en_US |
dc.identifier.journal | CHINESE JOURNAL OF PHYSICS | en_US |
dc.citation.volume | 41 | en_US |
dc.citation.issue | 4 | en_US |
dc.citation.spage | 406 | en_US |
dc.citation.epage | 413 | en_US |
dc.contributor.department | 電子物理學系 | zh_TW |
dc.contributor.department | 物理研究所 | zh_TW |
dc.contributor.department | Department of Electrophysics | en_US |
dc.contributor.department | Institute of Physics | en_US |
dc.identifier.wosnumber | WOS:000184795200009 | - |
dc.citation.woscount | 1 | - |
顯示於類別: | 期刊論文 |