ENHANCEMENT OF BAND-EDGE LUMINESCENCE IN HYDROGENATED STRAINED SI(0.84)GE(0.16)/SI QUANTUM-WELLS BY PHOTOCHEMICAL VAPOR-DEPOSITION

Abstract

Well-resolved band-edge luminescence spectra are reported for strained Si0.84Ge0.16/Si quantum wells grown by ultrahigh-vacuum chemical-vapor-deposition at 550-degrees-C. Phonon assisted transitions are also observed and the phonon structure of the spectrum is resolved. Blue shifting of the peak emission with decreasing well width is found in good agreement with theoretical calculations. The effects of hydrogenation using photochemical vapor deposition system are studied and an enhancement of the band edge luminescence intensity by a factor of three accompanied with a decrease in the intensity of the peaks coming from lattice defects is observed after hydrogenation. These results indicate that photochemical vapor deposition system is a useful tool for injecting atomic hydrogen into Si1-xGex/Si quantum wells and to enhance the band edge luminescence as well as to passivate the activity of the defects.