標題: | Strain-reduced GaN thick-film grown by hydride vapor phase epitaxy utilizing dot air-bridged structure |
作者: | Huang, Hsin-Hsiung Chao, Chu-Li Chi, Tung-Wei Chang, Yu-Lin Liu, Po-Chun Tu, Li-Wei Tsay, Jenq-Dar Kuo, Hao-Chung Cheng, Shun-Jen Lee, Wei-I 電子物理學系 光電工程學系 Department of Electrophysics Department of Photonics |
關鍵字: | Substrates;Hydride vapor phase epitaxy;Gallium;Nitride compounds |
公開日期: | 1-五月-2009 |
摘要: | A 300 pm GaN thick-film, in diameter 1.5 in, was demonstrated without any crack by hydride vapor phase epitaxy (HVPE) growth. The technique used in relaxing the residual stress caused by differences of thermal expansion coefficients (TEC) and lattice constants between GaN and sapphire substrate to prevent GaN film from crack is called a dot air-bridged structure. After the laser lift-off process, 300-mu m-thick freestanding GaN wafer, in diameter 1.5 in, could be fabricated. The compressive stress in the dot air-bridged structure was measured by micro-Raman spectroscopy with the E(2)(high) phonon mode. The compressive stress could be reduced to as small as 0.04 GPa, which could prevent the crack during the epitaxial process for GaN growth by HVPE. It is important to obtain a large-area crack-free GaN thick-film, which can be used for fabricating freestanding GaN wafer. Crown Copyright (C) 2009 Published by Elsevier B.V. All rights reserved. |
URI: | http://dx.doi.org/10.1016/j.jcrysgro.2009.01.071 http://hdl.handle.net/11536/27687 |
ISSN: | 0022-0248 |
DOI: | 10.1016/j.jcrysgro.2009.01.071 |
期刊: | JOURNAL OF CRYSTAL GROWTH |
Volume: | 311 |
Issue: | 10 |
起始頁: | 3029 |
結束頁: | 3032 |
顯示於類別: | 會議論文 |