統計資料
總造訪次數
| 檢視 | |
|---|---|
| Etching damages on AlGaN, GaN and InGaN caused by hybrid inductively coupled plasma etch and photoenhanced chemical wet etch by Schottky contact characterizations | 114 |
本月總瀏覽
| 六月 2025 | 七月 2025 | 八月 2025 | 九月 2025 | 十月 2025 | 十一月 2025 | 十二月 2025 | |
|---|---|---|---|---|---|---|---|
| Etching damages on AlGaN, GaN and InGaN caused by hybrid inductively coupled plasma etch and photoenhanced chemical wet etch by Schottky contact characterizations | 0 | 0 | 1 | 0 | 0 | 4 | 0 |
檔案下載
| 檢視 | |
|---|---|
| 000184662000006.pdf | 17 |
國家瀏覽排行
| 檢視 | |
|---|---|
| 中國 | 94 |
| 美國 | 16 |
| 愛爾蘭 | 1 |
| 台灣 | 1 |
縣市瀏覽排行
| 檢視 | |
|---|---|
| Shenzhen | 92 |
| Kensington | 7 |
| Menlo Park | 4 |
| Buffalo | 2 |
| Beijing | 1 |
| Durham | 1 |
| Edmond | 1 |
| Los Angeles | 1 |
| Zhengzhou | 1 |