標題: | Performance Enhancement of a-Plane Light-Emitting Diodes Using InGaN/GaN Superlattices |
作者: | Ling, Shih-Chun Wang, Te-Chung Chen, Jun-Rong Liu, Po-Chun Ko, Tsung-Shine Lu, Tien-Chang Kuo, Hao-Chung Wang, Shing-Chung Tsay, Jenq-Dar 光電工程學系 Department of Photonics |
公開日期: | 1-四月-2009 |
摘要: | We have fabricated a-plane light-emitting diodes (LEDs) with inserted InGaN/GaN superlattices. The structural characteristics and device performance of a-plane light-emitting diodes with/without superlattices were also identified. Transmission electron microscope (TEM) images revealed that the threading dislocation (TD) density for the sample using superlattices was reduced from 3 x 10(10) cm(-2) down to similar to 9 x 10(9) cm(-2). The electroluminescence (EL) intensity of the sample with InGaN/GaN superlattices was enhanced by a factor of 3.42 times to that of the conventional sample without InGaN/GaN superlattices. Furthermore, we observed that the polarization degree of a-plane LEDs with superlattices (56.3%) was much higher than that without superlattices (27.4%). A series of experiments demonstrated that the feasibility of using InGaN/GaN superlattices for the TD reduction and the improvement of luminescence performance in a-plane III-nitride devices. (C) 2009 The Japan Society of Applied Physics |
URI: | http://dx.doi.org/10.1143/JJAP.48.04C136 http://hdl.handle.net/11536/27754 |
ISSN: | 0021-4922 |
DOI: | 10.1143/JJAP.48.04C136 |
期刊: | JAPANESE JOURNAL OF APPLIED PHYSICS |
Volume: | 48 |
Issue: | 4 |
結束頁: | |
顯示於類別: | 會議論文 |