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dc.contributor.authorWang, Sheng-Chunen_US
dc.contributor.authorSu, Pinen_US
dc.contributor.authorChen, Kun-Mingen_US
dc.contributor.authorHuang, Sheng-Yien_US
dc.contributor.authorHung, Cheng-Chouen_US
dc.contributor.authorHuang, Guo-Weien_US
dc.date.accessioned2014-12-08T15:40:43Z-
dc.date.available2014-12-08T15:40:43Z-
dc.date.issued2009-04-01en_US
dc.identifier.issn0021-4922en_US
dc.identifier.urihttp://dx.doi.org/10.1143/JJAP.48.04C041en_US
dc.identifier.urihttp://hdl.handle.net/11536/27776-
dc.description.abstractThis paper presents small-signal and noise modeling for radio-frequency (RF) silicon-on-insulator (SOI) dynamic threshold voltage (DT) metal-oxide-semiconductor field-effect transistors (MOSFETs). The inherent body parasitics, such as source- and drain-side junction capacitances, and access body resistance have been incorporated in this model. In addition, the analytical equations useful for parameter extractions are derived. The modeling results show good agreements with the measured data both in RF small-signal and noise aspects up to 12 GHz. Besides, we have made comparisons of important model parameters for DT and standard MOSFETs. The extracted parameters show reasonable trend with respect to applying voltages and channel lengths, which reveals the accuracy of the extraction results using our proposed method. (C) 2009 The Japan Society of Applied Physicsen_US
dc.language.isoen_USen_US
dc.titleRadio-Frequency Small-Signal and Noise Modeling for Silicon-on-Insulator Dynamic Threshold Voltage Metal-Oxide-Semiconductor Field-Effect Transistorsen_US
dc.typeArticle; Proceedings Paperen_US
dc.identifier.doi10.1143/JJAP.48.04C041en_US
dc.identifier.journalJAPANESE JOURNAL OF APPLIED PHYSICSen_US
dc.citation.volume48en_US
dc.citation.issue4en_US
dc.citation.epageen_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000265652700042-
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