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dc.contributor.authorChan, LHen_US
dc.contributor.authorHong, KHen_US
dc.contributor.authorXiao, DQen_US
dc.contributor.authorHsieh, WJen_US
dc.contributor.authorLai, SHen_US
dc.contributor.authorShih, HCen_US
dc.contributor.authorLin, TCen_US
dc.contributor.authorShieu, FSen_US
dc.contributor.authorChen, KJen_US
dc.contributor.authorCheng, HCen_US
dc.date.accessioned2014-12-08T15:40:44Z-
dc.date.available2014-12-08T15:40:44Z-
dc.date.issued2003-06-16en_US
dc.identifier.issn0003-6951en_US
dc.identifier.urihttp://dx.doi.org/10.1063/1.1579136en_US
dc.identifier.urihttp://hdl.handle.net/11536/27785-
dc.description.abstractExtrinsic atoms were doped into multiwalled carbon nanotubes (MWCNTs) using microwave plasma-enhanced chemical vapor deposition. Doped nitrogen atoms alter the original parallel graphenes into highly curved ones including some fullerene-like structures. Doped nitrogen atoms could replace carbon atoms in MWCNTs and therefore increase the electronic density that enhances the electron field emission properties. On the other hand, the incorporation of boron into the carbon network apparently increases the concentration of electron holes that become electron traps and eventually impedes the electron field emission properties. Fowler-Nordheim plots show two different slopes in the curve, indicating that the mechanism of field emission is changed from low to high bias voltages. beta values could be increased by an amount of 42% under low bias voltages and 60% under high bias voltages in the N-doped MWCNTs, but decreased by an amount of 8% under low bias region and 68% under high bias voltage in the B-doped MWCNTs. (C) 2003 American Institute of Physics.en_US
dc.language.isoen_USen_US
dc.titleRole of extrinsic atoms on the morphology and field emission properties of carbon nanotubesen_US
dc.typeArticleen_US
dc.identifier.doi10.1063/1.1579136en_US
dc.identifier.journalAPPLIED PHYSICS LETTERSen_US
dc.citation.volume82en_US
dc.citation.issue24en_US
dc.citation.spage4334en_US
dc.citation.epage4336en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000183467500041-
dc.citation.woscount54-
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