標題: | Flower-like distributed self-organized Ge dots on patterned Si (001) substrates |
作者: | Lee, HM Yang, TH Luo, GL Chang, EY 材料科學與工程學系 友訊交大聯合研發中心 Department of Materials Science and Engineering D Link NCTU Joint Res Ctr |
關鍵字: | self-organized Ge dots;ultra high vacuum chemical molecular epitaxy;electron beam lithography;scanning electron microscopy;atomic force microscopy;mesa |
公開日期: | 15-六月-2003 |
摘要: | Self-organized Ge dots were obtained utilizing ultra high vacuum chemical molecular epitaxial growth of Ge on electron beam lithographically patterned Si (001) substrates. The dimensions of these etched Si mesa are 65/23/200 nm in diameter/height/period. The sizes and arrangement of the Ge dots were characterized by scanning electron microscopy and atomic force microscopy. The Ge dots have an average base width of 10 nm and the size is quite uniform. Due to the energetically favorable sites, the Ge dots tend to form homocentrically along the Si mesa edge, and their distribution is flower-like. [DOI: 10.1143/JJAP.42.L718]. |
URI: | http://dx.doi.org/10.1143/JJAP.42.L718 http://hdl.handle.net/11536/27791 |
ISSN: | 0021-4922 |
DOI: | 10.1143/JJAP.42.L718 |
期刊: | JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS |
Volume: | 42 |
Issue: | 6B |
起始頁: | L718 |
結束頁: | L720 |
顯示於類別: | 期刊論文 |