標題: Flower-like distributed self-organized Ge dots on patterned Si (001) substrates
作者: Lee, HM
Yang, TH
Luo, GL
Chang, EY
材料科學與工程學系
友訊交大聯合研發中心
Department of Materials Science and Engineering
D Link NCTU Joint Res Ctr
關鍵字: self-organized Ge dots;ultra high vacuum chemical molecular epitaxy;electron beam lithography;scanning electron microscopy;atomic force microscopy;mesa
公開日期: 15-六月-2003
摘要: Self-organized Ge dots were obtained utilizing ultra high vacuum chemical molecular epitaxial growth of Ge on electron beam lithographically patterned Si (001) substrates. The dimensions of these etched Si mesa are 65/23/200 nm in diameter/height/period. The sizes and arrangement of the Ge dots were characterized by scanning electron microscopy and atomic force microscopy. The Ge dots have an average base width of 10 nm and the size is quite uniform. Due to the energetically favorable sites, the Ge dots tend to form homocentrically along the Si mesa edge, and their distribution is flower-like. [DOI: 10.1143/JJAP.42.L718].
URI: http://dx.doi.org/10.1143/JJAP.42.L718
http://hdl.handle.net/11536/27791
ISSN: 0021-4922
DOI: 10.1143/JJAP.42.L718
期刊: JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS
Volume: 42
Issue: 6B
起始頁: L718
結束頁: L720
顯示於類別:期刊論文


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