標題: | Controlled placement of self-organized Ge dots on patterned Si (001) surfaces |
作者: | Lee, HM Yang, TH Luo, GL Chang, EY 材料科學與工程學系 友訊交大聯合研發中心 Department of Materials Science and Engineering D Link NCTU Joint Res Ctr |
關鍵字: | Si;Ge;dots;mesas;self-organized;ultra high-vacuum chemical molecular epitaxy;electron beam lithography |
公開日期: | 15-二月-2004 |
摘要: | The positioning and ordering of the self-organized Ge dots were controlled using the ultra high-vacuum chemical molecular epitaxial growth of Ge on electron beam lithographically patterned Si (001) substrates. The experimental results indicate that the edge smoothness of the etched Si holes affects the distribution and long-range ordering of the Ge dots formed. With optimized etching conditions, the Ge dots can be grown uniformly on the edges of the holes etched on the patterned Si substrates. The sizes of the Ge dots are approximately 10 nm. The proposed, technique can be applied to the fabrication of regimented arrays in signal processing applications. |
URI: | http://dx.doi.org/10.1143/JJAP.43.L247 http://hdl.handle.net/11536/27028 |
ISSN: | 0021-4922 |
DOI: | 10.1143/JJAP.43.L247 |
期刊: | JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS |
Volume: | 43 |
Issue: | 2B |
起始頁: | L247 |
結束頁: | L249 |
顯示於類別: | 期刊論文 |