標題: Controlled placement of self-organized Ge dots on patterned Si (001) surfaces
作者: Lee, HM
Yang, TH
Luo, GL
Chang, EY
材料科學與工程學系
友訊交大聯合研發中心
Department of Materials Science and Engineering
D Link NCTU Joint Res Ctr
關鍵字: Si;Ge;dots;mesas;self-organized;ultra high-vacuum chemical molecular epitaxy;electron beam lithography
公開日期: 15-Feb-2004
摘要: The positioning and ordering of the self-organized Ge dots were controlled using the ultra high-vacuum chemical molecular epitaxial growth of Ge on electron beam lithographically patterned Si (001) substrates. The experimental results indicate that the edge smoothness of the etched Si holes affects the distribution and long-range ordering of the Ge dots formed. With optimized etching conditions, the Ge dots can be grown uniformly on the edges of the holes etched on the patterned Si substrates. The sizes of the Ge dots are approximately 10 nm. The proposed, technique can be applied to the fabrication of regimented arrays in signal processing applications.
URI: http://dx.doi.org/10.1143/JJAP.43.L247
http://hdl.handle.net/11536/27028
ISSN: 0021-4922
DOI: 10.1143/JJAP.43.L247
期刊: JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS
Volume: 43
Issue: 2B
起始頁: L247
結束頁: L249
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