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dc.contributor.authorWuen, WSen_US
dc.contributor.authorWen, KAen_US
dc.date.accessioned2014-12-08T15:40:50Z-
dc.date.available2014-12-08T15:40:50Z-
dc.date.issued2003-06-01en_US
dc.identifier.issn0916-8524en_US
dc.identifier.urihttp://hdl.handle.net/11536/27838-
dc.description.abstractThe paper presents a dual-band switchable low noise amplifier implemented in 0.25-mum CMOS technology for 5GHz wireless multimedia applications. The high-speed wireless multimedia applications call for broadband design techniques for RF circuits. Instead of using conventional broadband techniques not well suitable for CMOS implementation, a dual-band switchable load is proposed for broadband LNA design. The dual-band switchable load enables the LNA operate at the lower or the upper band at 5-GHz band by a 1-bit control signal. The LNA exhibits over 17 dB power gain, 3.5 dB noise figure and input 1-dB compression point -23dBm in both frequency bands. It draws 9.5 mA from 2.5 V supply. The power gain remains larger than 16 dB as temperature varies from -5 to 65degreesC.en_US
dc.language.isoen_USen_US
dc.subjectCMOS LNAen_US
dc.subjectdual-banden_US
dc.subjectwireless LANen_US
dc.titleA dual-band switchable 5-GHz CMOS low noise amplifier for wireless multimedia applicationsen_US
dc.typeArticleen_US
dc.identifier.journalIEICE TRANSACTIONS ON ELECTRONICSen_US
dc.citation.volumeE86Cen_US
dc.citation.issue6en_US
dc.citation.spage1056en_US
dc.citation.epage1061en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000183364800029-
dc.citation.woscount0-
Appears in Collections:Articles