標題: DESIGN OF HOPFIELD-TYPE ASSOCIATIVE MEMORY WITH MAXIMAL BASIN OF ATTRACTION
作者: CHANG, JY
WU, CC
交大名義發表
電控工程研究所
National Chiao Tung University
Institute of Electrical and Control Engineering
關鍵字: ASSOCIATIVE MEMORIES;NEURAL NETWORKS
公開日期: 25-十一月-1993
摘要: A method is described for enlarging as much as possible the basin of attraction of a Hopfield-type associative memory. The proposed learning rule, a minimum-overlap learning algorithm that includes a threshold parameter, enables a Hopfield-type associative memory to be designed so that the memory will have a maximal basin of attraction. A technique that diminishes the effect of the threshold on the minimum-overlap learning algorithm is devised. Simulation results show that the basin of attraction constructed by the proposed method is indeed larger than that constructed by several well known methods.
URI: http://hdl.handle.net/11536/2784
ISSN: 0013-5194
期刊: ELECTRONICS LETTERS
Volume: 29
Issue: 24
起始頁: 2128
結束頁: 2130
顯示於類別:期刊論文


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