標題: | DESIGN OF HOPFIELD-TYPE ASSOCIATIVE MEMORY WITH MAXIMAL BASIN OF ATTRACTION |
作者: | CHANG, JY WU, CC 交大名義發表 電控工程研究所 National Chiao Tung University Institute of Electrical and Control Engineering |
關鍵字: | ASSOCIATIVE MEMORIES;NEURAL NETWORKS |
公開日期: | 25-十一月-1993 |
摘要: | A method is described for enlarging as much as possible the basin of attraction of a Hopfield-type associative memory. The proposed learning rule, a minimum-overlap learning algorithm that includes a threshold parameter, enables a Hopfield-type associative memory to be designed so that the memory will have a maximal basin of attraction. A technique that diminishes the effect of the threshold on the minimum-overlap learning algorithm is devised. Simulation results show that the basin of attraction constructed by the proposed method is indeed larger than that constructed by several well known methods. |
URI: | http://hdl.handle.net/11536/2784 |
ISSN: | 0013-5194 |
期刊: | ELECTRONICS LETTERS |
Volume: | 29 |
Issue: | 24 |
起始頁: | 2128 |
結束頁: | 2130 |
顯示於類別: | 期刊論文 |