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dc.contributor.authorChen, Shih Weien_US
dc.contributor.authorLo, Ming Huaen_US
dc.contributor.authorKao, Tsung Tingen_US
dc.contributor.authorKao, Chih Chiangen_US
dc.contributor.authorChu, Jung Tangen_US
dc.contributor.authorLin, Li Fanen_US
dc.contributor.authorHuang, Hung Wenen_US
dc.contributor.authorLu, Tien Changen_US
dc.contributor.authorKuo, Hao Chungen_US
dc.contributor.authorWang, Shing Chungen_US
dc.contributor.authorKuo, Chien Chengen_US
dc.contributor.authorLee, Cheng Chungen_US
dc.date.accessioned2014-12-08T15:40:51Z-
dc.date.available2014-12-08T15:40:51Z-
dc.date.issued2009-04-01en_US
dc.identifier.issn0021-4922en_US
dc.identifier.urihttp://dx.doi.org/10.1143/JJAP.48.04C127en_US
dc.identifier.urihttp://hdl.handle.net/11536/27854-
dc.description.abstractNitride-based vertical cavity surface emitting lasers (VCSEL) with hybrid mirror has been investigated. We further measured the as-grown samples (without top dielectric distributed Bragg reflector) by p-photoluminescence, scanning near-field optical microscopy, and cathodoluminescence (CL). By different excitation power density, the experimental results indicated that the VCSEL devices have different lasing modes and spot sizes, represented inhomogeneous gain and loss distribution in the whole structure. The non-uniform emission intensity distribution including several bright spots of about 1 to 2 pm was observed for both VCSEL devices and as-grown samples, which was obtained from CL measurement, due to the effect of indium clusters and non-uniform micro-cavity resonant in InGaN multi-quantum wells (MQWs). The results show the significant influence on commercial applications such as light emitting diodes, lasers devices and so on. (C) 2009 The Japan Society of Applied Physicsen_US
dc.language.isoen_USen_US
dc.titleEffects of Inhomogeneous Gain and Loss on Nitride-Based Vertical-Cavity Surface Emitting Lasersen_US
dc.typeArticle; Proceedings Paperen_US
dc.identifier.doi10.1143/JJAP.48.04C127en_US
dc.identifier.journalJAPANESE JOURNAL OF APPLIED PHYSICSen_US
dc.citation.volume48en_US
dc.citation.issue4en_US
dc.citation.epageen_US
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentDepartment of Photonicsen_US
dc.identifier.wosnumberWOS:000265652700128-
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