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dc.contributor.authorHuang, HCen_US
dc.contributor.authorVoskoboynikov, Oen_US
dc.contributor.authorLee, CPen_US
dc.date.accessioned2019-04-03T06:38:14Z-
dc.date.available2019-04-03T06:38:14Z-
dc.date.issued2003-05-15en_US
dc.identifier.issn2469-9950en_US
dc.identifier.urihttp://dx.doi.org/10.1103/PhysRevB.67.195337en_US
dc.identifier.urihttp://hdl.handle.net/11536/27861-
dc.description.abstractWe present a theoretical study of the spin-dependent scattering of electrons from screened impurities in III-V semiconductor quantum wells. Our calculation is based on the effective one-electronic-band Hamiltonian and the spin-orbit coupling with the Coulombic potential of the impurities. We demonstrate that the spin-orbit interaction can lead to recognizable magnitudes of spin asymmetry in the elastic-scattering cross section. Fairly large values of the Sherman function (about 0.01) are obtained for repulsive and attractive impurities in quantum wells of narrow gap semiconductors.en_US
dc.language.isoen_USen_US
dc.titleSpin-orbit interaction and electron elastic scattering from impurities in quantum wellsen_US
dc.typeArticleen_US
dc.identifier.doi10.1103/PhysRevB.67.195337en_US
dc.identifier.journalPHYSICAL REVIEW Ben_US
dc.citation.volume67en_US
dc.citation.issue19en_US
dc.citation.spage0en_US
dc.citation.epage0en_US
dc.contributor.department交大名義發表zh_TW
dc.contributor.departmentNational Chiao Tung Universityen_US
dc.identifier.wosnumberWOS:000183380000073en_US
dc.citation.woscount12en_US
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