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dc.contributor.authorCheng, Bo-Siaoen_US
dc.contributor.authorLee, Chia-Enen_US
dc.contributor.authorKuo, Hao-Chungen_US
dc.contributor.authorLu, Tien-Changen_US
dc.contributor.authorWang, Shing-Chungen_US
dc.date.accessioned2014-12-08T15:40:52Z-
dc.date.available2014-12-08T15:40:52Z-
dc.date.issued2009-04-01en_US
dc.identifier.issn0021-4922en_US
dc.identifier.urihttp://dx.doi.org/10.1143/JJAP.48.04C115en_US
dc.identifier.urihttp://hdl.handle.net/11536/27865-
dc.description.abstractThe flip-chip light emitting diodes (FC-LEDs) with triple roughened surfaces were fabricated comprising top surface sapphire textured layer, interface patterned sapphire layer, and bottom naturally textured p-GaN layer. Light extraction efficiency was enhanced by such triple textured layers. The light output power of FC-LEDs was increased 60% (at 350 mA current injection) compared to that of conventional FC-LEDs by implementing the triple roughened surfaces. The enhancement efficiency can be simulated and the simulated results showed the same trend as the results of experiment. (C) 2009 The Japan Society of Applied Physicsen_US
dc.language.isoen_USen_US
dc.titlePower Enhancement of GaN-Based Flip-Chip Light-Emitting Diodes with Triple Roughened Surfacesen_US
dc.typeArticle; Proceedings Paperen_US
dc.identifier.doi10.1143/JJAP.48.04C115en_US
dc.identifier.journalJAPANESE JOURNAL OF APPLIED PHYSICSen_US
dc.citation.volume48en_US
dc.citation.issue4en_US
dc.citation.epageen_US
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentDepartment of Photonicsen_US
dc.identifier.wosnumberWOS:000265652700116-
Appears in Collections:Conferences Paper


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