Power Enhancement of GaN-Based Flip-Chip Light-Emitting Diodes with Triple Roughened Surfaces

doi:10.1143/JJAP.48.04C115

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	Cheng, Bo-Siao	en_US
dc.contributor.author	Lee, Chia-En	en_US
dc.contributor.author	Kuo, Hao-Chung	en_US
dc.contributor.author	Lu, Tien-Chang	en_US
dc.contributor.author	Wang, Shing-Chung	en_US
dc.date.accessioned	2014-12-08T15:40:52Z	-
dc.date.available	2014-12-08T15:40:52Z	-
dc.date.issued	2009-04-01	en_US
dc.identifier.issn	0021-4922	en_US
dc.identifier.uri	http://dx.doi.org/10.1143/JJAP.48.04C115	en_US
dc.identifier.uri	http://hdl.handle.net/11536/27865	-
dc.description.abstract	The flip-chip light emitting diodes (FC-LEDs) with triple roughened surfaces were fabricated comprising top surface sapphire textured layer, interface patterned sapphire layer, and bottom naturally textured p-GaN layer. Light extraction efficiency was enhanced by such triple textured layers. The light output power of FC-LEDs was increased 60% (at 350 mA current injection) compared to that of conventional FC-LEDs by implementing the triple roughened surfaces. The enhancement efficiency can be simulated and the simulated results showed the same trend as the results of experiment. (C) 2009 The Japan Society of Applied Physics	en_US
dc.language.iso	en_US	en_US
dc.title	Power Enhancement of GaN-Based Flip-Chip Light-Emitting Diodes with Triple Roughened Surfaces	en_US
dc.type	Article; Proceedings Paper	en_US
dc.identifier.doi	10.1143/JJAP.48.04C115	en_US
dc.identifier.journal	JAPANESE JOURNAL OF APPLIED PHYSICS	en_US
dc.citation.volume	48	en_US
dc.citation.issue	4	en_US
dc.citation.epage		en_US
dc.contributor.department	光電工程學系	zh_TW
dc.contributor.department	Department of Photonics	en_US
dc.identifier.wosnumber	WOS:000265652700116	-
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