標題: | Superpolishing for planarizing copper damascene interconnects |
作者: | Chang, SC Shieh, JM Dai, BT Feng, MS Li, YH Shih, CH Tsai, MH Shue, SL Liang, RS Wang, YL 材料科學與工程學系 Department of Materials Science and Engineering |
公開日期: | 1-五月-2003 |
摘要: | We demonstrate a superpolishing electrolyte, which consists of acid additives in conventional Cu polishing electrolytes (H3PO4), for efficiently planarizing Cu damascene features. The significant additive concentration gradient in features, resulting in a selective Cu dissolution rate within features, is explored as a major mechanism that yields such electrolytes with high planarization efficiency. Moreover, another additive, polyethylene glycol as a suppressor, is also employed to reduce oxygen bubbling on polished films. Consequently, a smooth surface with a complete step height elimination is obtained in a 70 mm trench after electropolishing. (C) 2003 The Electrochemical Society. |
URI: | http://dx.doi.org/10.1149/1.1565853 http://hdl.handle.net/11536/27881 |
ISSN: | 1099-0062 |
DOI: | 10.1149/1.1565853 |
期刊: | ELECTROCHEMICAL AND SOLID STATE LETTERS |
Volume: | 6 |
Issue: | 5 |
起始頁: | G72 |
結束頁: | G74 |
顯示於類別: | 期刊論文 |